Contactless electroreflectance and piezoreflectance study of GaAs/GaAsP multiple quantum well structures

O. Gorea; A. Korotcov; L. Malikova; F. H. Pollak

Contactless electroreflectance and piezoreflectance study of GaAs/GaAsP multiple quantum well structures

O. Gorea^*, A. Korotcov, L. Malikova, F. H. Pollak

^*Corresponding author for this work

Radiology and Bioengineering

Research output: Contribution to conference › Paper › peer-review

Abstract

The contactless electroreflectance (CER) and piezoreflectance (PzR) were used to characterized GaAs/GaAs_1-xP_x multiple quantum well (MQW) structures grown by chloride transport chemical vapor deposition (CTCVD) on GaAs substrates. For the GaAs_0.97P_0.03/GaAs_0.71P_0.29 MQW comparison between the experimentally observed energies of a number of observed quantum transitions and a theoretical envelope function calculation, including the effects of strain in the barriers, made it possible to evaluate the unstrained conduction band offset parameter Q_c = 0.50±0.05. This result is in a good agreement with most prior papers dedicated to this matter.

Original language	English
Pages	113-116
Number of pages	4
State	Published - 1999
Event	Proceedings of the 1999 International Semiconductor Conference (CAS '99) - Sinaia, Romania Duration: 5 Oct 1999 → 9 Oct 1999

Conference

Conference	Proceedings of the 1999 International Semiconductor Conference (CAS '99)
City	Sinaia, Romania
Period	5/10/99 → 9/10/99

Cite this

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title = "Contactless electroreflectance and piezoreflectance study of GaAs/GaAsP multiple quantum well structures",

abstract = "The contactless electroreflectance (CER) and piezoreflectance (PzR) were used to characterized GaAs/GaAs1-xPx multiple quantum well (MQW) structures grown by chloride transport chemical vapor deposition (CTCVD) on GaAs substrates. For the GaAs0.97P0.03/GaAs0.71P0.29 MQW comparison between the experimentally observed energies of a number of observed quantum transitions and a theoretical envelope function calculation, including the effects of strain in the barriers, made it possible to evaluate the unstrained conduction band offset parameter Qc = 0.50±0.05. This result is in a good agreement with most prior papers dedicated to this matter.",

author = "O. Gorea and A. Korotcov and L. Malikova and Pollak, \{F. H.\}",

year = "1999",

language = "English",

pages = "113--116",

note = "Proceedings of the 1999 International Semiconductor Conference (CAS '99) ; Conference date: 05-10-1999 Through 09-10-1999",

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TY - CONF

T1 - Contactless electroreflectance and piezoreflectance study of GaAs/GaAsP multiple quantum well structures

AU - Gorea, O.

AU - Korotcov, A.

AU - Malikova, L.

AU - Pollak, F. H.

PY - 1999

Y1 - 1999

N2 - The contactless electroreflectance (CER) and piezoreflectance (PzR) were used to characterized GaAs/GaAs1-xPx multiple quantum well (MQW) structures grown by chloride transport chemical vapor deposition (CTCVD) on GaAs substrates. For the GaAs0.97P0.03/GaAs0.71P0.29 MQW comparison between the experimentally observed energies of a number of observed quantum transitions and a theoretical envelope function calculation, including the effects of strain in the barriers, made it possible to evaluate the unstrained conduction band offset parameter Qc = 0.50±0.05. This result is in a good agreement with most prior papers dedicated to this matter.

AB - The contactless electroreflectance (CER) and piezoreflectance (PzR) were used to characterized GaAs/GaAs1-xPx multiple quantum well (MQW) structures grown by chloride transport chemical vapor deposition (CTCVD) on GaAs substrates. For the GaAs0.97P0.03/GaAs0.71P0.29 MQW comparison between the experimentally observed energies of a number of observed quantum transitions and a theoretical envelope function calculation, including the effects of strain in the barriers, made it possible to evaluate the unstrained conduction band offset parameter Qc = 0.50±0.05. This result is in a good agreement with most prior papers dedicated to this matter.

UR - http://www.scopus.com/inward/record.url?scp=0033328786&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0033328786

SP - 113

EP - 116

T2 - Proceedings of the 1999 International Semiconductor Conference (CAS '99)

Y2 - 5 October 1999 through 9 October 1999

ER -

Contactless electroreflectance and piezoreflectance study of GaAs/GaAsP multiple quantum well structures

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