Optical properties of GaAs/GaAs1-xPx superlattices

A. Korotcov

Optical properties of GaAs/GaAs_1-xP_x superlattices

A. Korotcov^*

^*Corresponding author for this work

Radiology and Bioengineering

Research output: Contribution to conference › Paper › peer-review

Abstract

Time resolved photoluminescence of the GaAs/GaAs_0.76P_0.24 superlattice (SL) have been investigated at 90 K temperature and different excitation levels. The transitions from electrons minibands to holes ones are explained and it is shown that experimental results are described by SL model of II type with valence-band offset larger than conduction band one.

Original language	English
Pages	331-333
Number of pages	3
State	Published - 1996
Event	Proceedings of the 1996 International Semiconductor Conference. Part 2 (of 2) - Sinaia, Rom Duration: 9 Oct 1996 → 12 Oct 1996

Conference

Conference	Proceedings of the 1996 International Semiconductor Conference. Part 2 (of 2)
City	Sinaia, Rom
Period	9/10/96 → 12/10/96

Cite this

@conference{fe5500d7fa5f4112bfdbe0720eb30f1b,

title = "Optical properties of GaAs/GaAs1-xPx superlattices",

abstract = "Time resolved photoluminescence of the GaAs/GaAs0.76P0.24 superlattice (SL) have been investigated at 90 K temperature and different excitation levels. The transitions from electrons minibands to holes ones are explained and it is shown that experimental results are described by SL model of II type with valence-band offset larger than conduction band one.",

author = "A. Korotcov",

year = "1996",

language = "English",

pages = "331--333",

note = "Proceedings of the 1996 International Semiconductor Conference. Part 2 (of 2) ; Conference date: 09-10-1996 Through 12-10-1996",

}

TY - CONF

T1 - Optical properties of GaAs/GaAs1-xPx superlattices

AU - Korotcov, A.

PY - 1996

Y1 - 1996

N2 - Time resolved photoluminescence of the GaAs/GaAs0.76P0.24 superlattice (SL) have been investigated at 90 K temperature and different excitation levels. The transitions from electrons minibands to holes ones are explained and it is shown that experimental results are described by SL model of II type with valence-band offset larger than conduction band one.

AB - Time resolved photoluminescence of the GaAs/GaAs0.76P0.24 superlattice (SL) have been investigated at 90 K temperature and different excitation levels. The transitions from electrons minibands to holes ones are explained and it is shown that experimental results are described by SL model of II type with valence-band offset larger than conduction band one.

UR - http://www.scopus.com/inward/record.url?scp=0030378817&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030378817

SP - 331

EP - 333

T2 - Proceedings of the 1996 International Semiconductor Conference. Part 2 (of 2)

Y2 - 9 October 1996 through 12 October 1996

ER -

Optical properties of GaAs/GaAs1-xPx superlattices

Abstract

Conference

Fingerprint

Cite this

Optical properties of GaAs/GaAs_1-xP_x superlattices