Skip to main navigation Skip to search Skip to main content

Raman scattering characterization of vertical aligned 1D IrO2 nanocrystals grown on single crystal oxide substrates

Alexandru V. Korotcov, Ying Sheng Huang*, Dah Shyang Tsai, Kwong Kau Tiong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Raman scattering (RS) has been used as a technique for characterization of IrO2 one dimensional (1D) nanocrystals (NCs) deposited on sapphire(100) and LiNbO3(100) substrates under various conditions. The IrO2 NCs were grown via metalorganic chemical vapor deposition method using (MeCp)(COD)Ir as the precursor and reactive magnetron sputtering using Ir metal target. The red-shifts and asymmetric broadening of the Raman lineshape for the NCs were analyzed by a modified spatial correlation (MSC) model, which includes the factor of stress induced shift. The proposed MSC model showed that the effects of stress and nanometric size can be separated in analyzing the observed Raman features. The usefulness of the experimental RS together with the MSC model analysis as a residual stress and structural characterization technique for 1D NCs has been demonstrated.

Original languageEnglish
Pages (from-to)310-314
Number of pages5
JournalSolid State Communications
Volume137
Issue number6
DOIs
StatePublished - Feb 2006

Keywords

  • A. Nanostructures
  • C. Field emission scanning electron microscopy
  • E. Raman scattering

Cite this